Fermi-Argonne Semiconducting Pixel Array X-ray (FASPAX) detector

FASPAX was planned for extremely fast integrating area detector with wide dynamic range for time resolved applications (i.e. pump probe study) at the upgraded Advanced Photon Source (APS.) The detector is supposed to achieve 13 MHz of burst image rate with 10⁵ of dynamic range. To achieve such drastic goal, a unique bipolar junction transistor adoptive gain control circuit was developed. At this moment, the pixel dimension is planned for 100 um x 100 um of pitch with 5 mm x 5 mm of detector size. The adoptive gain ASIC is capable of storing 7 images while processing new incoming photons while feeding the data acquisition system behind it.

On the other hand, the FASPAX is basically a hybrid detector: the sensor part is exchangeable from conventional silicon sensors to exotic materials not limited to CdTe? and CdZnTe?. In fact, due to the fast readout requirement, the readout speed of silicon sensors are limited by plasma delay effect which can only be averted with extremely high electrical bias across the detector to tear apart electron cloud. Thus, the silicon sensors need to be able to withstand such extreme external bias (~ 1000 V across the silicon sensor) constantly. The main purpose of this wiki is tracking TCAD simulation results for the sensor elements under such extreme bias.